 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MHPM7B15A60A by MHPM7B15A60A/D Hybrid Power Module Integrated Power Stage for 1.0 hp Motor Drives (This device is not recommended for new designs) (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board. * Short Circuit Rated 10 s @ 25C, 300V * Pin-to-Baseplate Isolation exceeds 2500 Vac (rms) * Convenient Package Outline Recognized * UL * Access to Positive and Negative DC Bus * Visit our website at http://www.mot-sps.com/tsg/ MHPM7B15A60A 15 AMP, 600 VOLT HYBRID POWER MODULE PLASTIC PACKAGE CASE 440-02, Style 1 MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) Rating INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (TJ = 125C) Average Output Rectified Current Peak Non-repetitive Surge Current -- (1/2 Cycle)(1) OUTPUT INVERTER IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current(2) Continuous Free-Wheeling Diode Current Peak Repetitive Free-Wheeling Diode Current(2) IGBT Power Dissipation per die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range Short Circuit Duration (VCE = 300V, TJ = 25C) (1) 1 cycle = 50 or 60 Hz (2) 1.0 ms = 1.0% duty cycle VCES VGES ICmax IC(pk) IFmax IF(pk) PD PD TJ tsc 600 20 15 30 15 30 55 30 - 40 to +125 10 V V A A A A W W C s VRRM IO IFSM 600 15 200 V A A Symbol Value Unit REV 2 (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MHPM7B15A60A MAXIMUM DEVICE RATINGS (continued) (TJ = 25C unless otherwise noted) Rating BRAKE CIRCUIT IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current(2) IGBT Power Dissipation (TC = 95C) Peak Repetitive Output Diode Reverse Voltage (TJ = 125C) Continuous Output Diode Current Peak Output Diode Current(2) TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Operating Case Temperature Range Storage Temperature Range Mounting Torque VISO TC Tstg -- 2500 - 40 to + 90 - 40 to +125 6.0 Vac C C lb-in VCES VGES ICmax IC(pk) PD VRRM IFmax IF(pk) 600 20 15 30 55 600 15 30 V V A A W V A A Symbol Value Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRM = 600 V) Forward Voltage (IF = 15 A) Thermal Resistance (Each Die) OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Fall Time -- Inductive Load (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(off) = 20 ) Turn-On Energy (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(on) = 180 ) Turn-Off Energy (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(off) = 20 ) Free Wheeling Diode Forward Voltage (IF = 15 A, VGE = 0 V) Free Wheeling Diode Reverse Recovery Time (IF = 15 A, V = 300 V, di/dt = 100 A/s) Free Wheeling Diode Stored Charge (IF = 15 A, V = 300 V, di/dt = 100 A/s) Thermal Resistance -- IGBT (Each Die) Thermal Resistance -- Free-Wheeling Diode (Each Die) (2) 1.0 ms = 1.0% duty cycle IGES ICES -- -- VGE(th) V(BR)CES VCE(SAT) Cies QT tf Eon Eoff VF trr Qrr RJC RJC 4.0 600 -- -- -- -- -- -- -- -- -- -- -- 6.0 2000 6.0 -- 2.7 2300 75 210 -- -- 1.3 140 -- -- -- 100 -- 8.0 -- 3.5 -- -- 500 1.0 1.0 2.0 200 900 1.9 3.7 V V V pF nC ns mJ mJ V ns nC C/W C/W -- -- 20 A A IR VF RJC -- -- -- 5.0 1.05 -- 50 1.5 2.9 A V C/W Symbol Min Typ Max Unit 2 Motorola IGBT Device Data MHPM7B15A60A ELECTRICAL CHARACTERISTICS (continued) (TJ = 25C unless otherwise noted) Characteristic BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 25C TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Fall Time -- Inductive Load (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(off) = 20 ) Turn-On Energy (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(on) = 180 ) Turn-Off Energy (VCE = 300 V, IC = 15 A, VGE = 15 V, RG(off) = 20 ) Output Diode Forward Voltage (IF = 15 A) Output Diode Reverse Leakage Current Thermal Resistance -- IGBT Thermal Resistance -- Output Diode IGES ICES -- -- VGE(th) V(BR)CES VCE(SAT) Cies QT tf E(on) E(off) VF IR RJC RJC 4.0 600 -- -- -- -- -- -- -- -- -- -- 6.0 2000 6.0 -- 2.7 2300 75 210 -- -- 1.3 -- -- -- 100 8.0 -- 3.5 -- -- 500 1.0 1.0 2.0 50 1.9 3.7 V V V pF nC ns mJ mJ V A C/W C/W -- -- 20 A A Symbol Min Typ Max Unit Motorola IGBT Device Data 3 MHPM7B15A60A Typical Characteristics 30 IF , FORWARD CURRENT (AMPS) IF , FORWARD CURRENT (AMPS) 25 20 15 TJ = 125C 10 5.0 0 0 0.2 0.4 1.2 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.4 1.6 25C 30 25 20 15 TJ = 125C 10 5.0 0 25C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Forward Characteristics -- Input Rectifier Figure 2. Forward Charactristics -- Free-Wheeling Diode 30 IC , COLLECTOR CURRENT (AMPS) 25 20 15 10 5 TJ = 25C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 9.0 V 12 V 15 V IC , COLLECTOR CURRENT (AMPS) VGE = 18 V 30 VGE = 18 V 25 20 15 10 5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 9.0 V 15 V 12 V TJ = 125C Figure 3. Forward Characteristics, TJ = 25C Figure 4. Forward Characteristics, TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 400 350 300 250 200 150 100 50 0 0 16 VCE = 100 V 200 V 300 V 14 12 10 8 6 4 2 16 12 8 4 0 0 8 16 4 12 VGE, GATE-EMITTER VOLTAGE (VOLTS) 20 10 20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) 90 0 100 Figure 5. Collector-Emitter Voltage versus Gate-Emitter Voltage Figure 6. Collector-Emitter and Gate-Emitter Voltages versus Total Gate Charge 4 Motorola IGBT Device Data VGE , GATE-EMITTER VOLTAGE (VOLTS) IC = 5 A 10 A 20 A 450 IC = 15 A TJ = 25C 18 MHPM7B15A60A Typical Characteristics 1000 toff 100 t, TIME (ns) t, TIME (ns) tf td(off) 100 1000 toff tf td(off) 10 VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 25C 0 20 30 10 IC COLLECTOR CURRENT (AMPS) 40 10 VCE = 300 V VGE = 15 V RG(off) = 20 TJ = 125C 0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 40 1 1 Figure 7. Inductive Switching Times versus Collector Current, TJ = 25C Figure 8. Inductive Switching Times versus Collector Current, TJ = 125C 1000 toff tf td(off) 100 t, TIME (ns) 1000 TJ = 125C 100 25C tr t, TIME (ns) VCE = 300 V VGE = 15 V IC = 15 A TJ = 25C 10 10 100 RG(off), GATE RESISTANCE (OHMS) 1000 10 VCE = 300 V VGE = 15 V RG(on) = 180 0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 40 1 Figure 9. Inductive Switching Times versus Gate Resistance Figure 10. Inductive Switching Times versus Collector Current 1000 1000 Eoff , TURN-OFF ENERGY LOSSES( J) 100 t, TIME (ns) tr 100 TJ = 125C 10 VCE = 300 V VGE = 15 V IC = 15 A TJ = 25C 10 100 RG(on), GATE RESISTANCE (OHMS) 1000 10 VCE = 300 V VGE = 15 V RG(off) = 20 1 1 0 20 10 30 IC COLLECTOR CURRENT (AMPS) 40 Figure 11. Inductive Switching Times versus Gate Resistance Figure 12. Turn-Off Energy Losses versus Collector Current Motorola IGBT Device Data 5 MHPM7B15A60A Typical Characteristics 1000 Eoff , TURN-OFF ENERGY LOSSES( J) VCE = 300 V VGE = 15 V IC = 15 A TJ = 25C 10000 Cies 1000 Coes 100 100 C, CAPACITANCE (pF) 10 Cres 10 10 100 RG(off) GATE RESISTANCE (OHMS) 1000 1.0 0 20 60 40 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 13. Turn-Off Energy Losses versus Gate Resistance Figure 14. Capacitance Variation 40 IC , COLLECTOR CURRENT (AMPS) 35 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 800 L = 200 H VGE = 15 V RG(on) = 180 TJ = 25C Figure 15. Reverse Biased Safe Operating Area (RBSOA) ton td(on) OUTPUT, Vout INVERTED 10% 90% VCE INPUT, Vin 50% 10% PULSE WIDTH 50% tr 90% td(off) 90% toff tf IC RG L VCE Figure 16. Inductive Switching Time Test Circuit and Timing Chart 6 Motorola IGBT Device Data 1 P1 P2 7 Q1 Q3 Q5 Motorola IGBT Device Data 9 G1 E1 D8 8 10 D10 D12 D7 12 U V W Q2 16 D2 G7 G2 G4 17 D4 G6 Q4 14 D6 Q6 20 19 18 G3 E3 G5 E5 D1 11 13 D3 D5 B 21 Q7 15 D9 D11 D13 N1 25 6 NC NC = PIN NUMBER IDENTIFICATION NC NC 4 5 2 3 These pins are physical terminations but not connected internally. DEVICE INTEGRATION N2 3-Phase Input Rectifier Bridge Brake IGBT/ Diode 24 R 23 S Figure 17. Integrated Power Stage Schematic 22 T 3-Phase Output IGBT/Diode Bridge MHPM7B15A60A 7 MHPM7B15A60A PACKAGE DIMENSIONS E C K AB AC AD AE AF 3 PL AA 9 PL A Q N 1 AH G 2 PL 17 2 PL V L M S R B DETAIL Z Y 4 PL 25 18 AG P U X 4 PL T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G. AA...) ARE TO THE CENTER OF THE LEAD. H 7 PL J 25 PL DIM A B C D E F G H J K L M N P Q R S T U V X Y AA AB AC AD AE AF AG AH D F DETAIL Z MILLIMETERS MIN MAX 97.54 98.55 52.45 53.47 14.60 15.88 0.43 0.84 10.80 12.06 0.94 1.35 1.60 2.21 8.58 9.19 0.30 0.71 18.80 20.57 19.30 20.32 38.99 40.26 9.78 11.05 82.55 83.57 4.01 4.62 26.42 27.43 12.06 12.95 4.32 5.33 86.36 87.38 14.22 15.24 6.55 7.16 2.49 3.10 2.24 2.84 7.32 7.92 4.78 5.38 8.58 9.19 6.05 6.65 4.78 5.38 69.34 70.36 --- 5.08 INCHES MIN MAX 3.840 3.880 2.065 2.105 0.575 0.625 0.017 0.033 0.425 0.475 0.037 0.053 0.063 0.087 0.338 0.362 0.012 0.028 0.74 0.81 0.760 0.800 1.535 1.585 0.385 0.435 3.250 3.290 0.158 0.182 1.040 1.080 0.475 0.515 0.170 0.210 3.400 3.440 0.560 0.600 0.258 0.282 0.098 0.122 0.088 0.112 0.288 0.312 0.188 0.212 0.338 0.362 0.238 0.262 0.188 0.212 2.730 2.770 --- 0.200 CASE 440-02 ISSUE A 8 Motorola IGBT Device Data MHPM7B15A60A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Motorola IGBT Device Data MHPM7B15A60A/D 9 |
Price & Availability of MHPM7B15A60AD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |